Core research
Atomic-scale processes of semiconductors
- Atomic layer deposition and etching
- New plasma solution for atomic layer etching
- Wide-gap semiconductor for power devices (GaN, diamond, Ga2O3)
- New solution using plasma (Inductive-coupled plasma — ICP)
Surrounding area
- Wide-gap semiconductors
- Defects in Ga2O3 (H. Okumura, A. Traoré & P. Ferrandis)
- Diamond devices (T. Makino & J. Pernot)
- NV center in diamond (T. Sakurai & E. Gheeraert)
- Characterization of defects (A. Uedono & J. Pernot, B. Daudin)
- Solar cells
- Defects in Cu2ZnSnS4 (T. Sakurai, K. Akimoto & H. Boukari)
- Defects in BaSi2 (T. Suemasu & S. Gambarelli)
- Spin and magnetism
- Single spin in quantum dots (S. Kuroda & L. Besombes, H. Boukari)
- Magnetic nitrides (T. Suemasu & L. Vila, J.P. Attané)
- Magnetic oxides (H. Yanagihara & N. Dempsey)
- Biochemical electronics
- Printable bio-devices (S. Tsujimura & A. Zebda)